IEEE

Suppression of Dynamic Resistance Degradation in 1200-V GaN-on-Sapphire E-Mode GaN HEMTs by Drain-Side Thin p-GaN Design

Abstract: Dynamic resistance degradation, which is severely affected by the trapping effect, is a critical challenge for lateral AlGaN/GaN power devices, especially when operating in high-voltage and ...
IEEE

Simulation Study of p-GaN/AlGaN/GaN HEMTs with Composite NiO Gate

Abstract: This work introduces a novel gate-structured GaN HEMT with a composite layer of NiO and p-GaN. The effect of the composite layer and various NiO layer length ratios are investigated by ...