SiC MOSFETs are usually susceptible to damage as a result of short-circuiting events because of the fast switching speeds and low on-state resistance. 3 A team of researchers affiliated with the ...
Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
A technical paper titled “Design Strategies for Anodes and Interfaces Toward Practical Solid-State Li-Metal Batteries” was published by researchers at Samsung Advanced Institute of Technology.
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